PROPERTY CONTROL FOR HIGH-QUALITY BA1-XKXBIO3 EPITAXIAL THIN-FILMS PREPARED BY HIGH-PRESSURE REACTIVE RF-MAGNETRON SPUTTERING

The electrical properties of Ba1-xKxBiO3(BKBO) epitaxial thin films on SrTiO3(110) substrates have been successfully controlled using high-p ressure reactive rf-magnetron sputtering under an 80-Pa discharge gas. We investigated the relationship between the target composition and t he electrical properties of BKBO films. The zero resistance temperatur e (T(ce)) and the temperature dependence of resistivity above the supe rconducting onset temperature (T(co)) were found to be primarily influ enced by the ratio of Ba/K and the Bi content of the target compositio n, respectively. Electrical measurements showed that the highest Tce o f as-grown BKBO epitaxial film was 28 K.