V AND TI DOPING EFFECT ON IN-AG-TE-SB OPTICAL-PHASE CHANGE REWRITABLEDISC

Citation
J. Tominaga et al., V AND TI DOPING EFFECT ON IN-AG-TE-SB OPTICAL-PHASE CHANGE REWRITABLEDISC, JPN J A P 1, 32(5A), 1993, pp. 1980-1982
Citations number
9
Categorie Soggetti
Physics, Applied
Volume
32
Issue
5A
Year of publication
1993
Pages
1980 - 1982
Database
ISI
SICI code
Abstract
In-Ag-Te-Sb is known as one of the alloys suitable for optical phase c hange recording, which has a high erasability at the linear recording velocity of around 7 m/s. The phase change rewritable recording succee ded at the linear recording velocity of 1.4 m/s with 0.5 at.% doping o f Ti or V atoms, which delayed the crystallization time drastically, b ut maintained the high erasability. It was possible to make 10(3) repe tition recordings with jitter in the reproduced signal of less than 40 ns, when the eight-fourteen modulation (EFM) signal, which is general ly used for compact discs (CD), was applied.