GROWTH OF GAAS EPITAXIAL MICROCRYSTALS ON AN S-TERMINATED GAAS SUBSTRATE BY SUCCESSIVE IRRADIATION OF GA AND AS MOLECULAR-BEAMS

Numerous GaAs epitaxial microcrystals with an average base size of 250 angstrom x 430 angstrom with (111) facets were fabricated on a sulfur -terminated (S-terminated) GaAs (001) substrate with successive irradi ation of Ga and As molecular beams. The growth of GaAs microcrystals o n the S-terminated substrate was caused by a vapor-liquid-solid (VLS) mechanism. This phenomenon originated in the inertness for the adhesio n of Ga and As molecules and nearly equal lattice constants of the S-t erminated GaAs surface and GaAs surface. This method, called droplet e pitaxy, is thought to show promise as a growth method for fabricating GaAs quantum well boxes.