We have measured the current-voltage (I-V) characteristic of semicondu
ctor superlattices in the presence of intense terahertz electric field
s produced by free-electron lasers. The nonlinear I-V curves exhibit n
ew structure that we attribute to photon-mediated sequential resonant
tunneling. This tunneling process consists of well to well sequential
tunneling into photon sidebands induced by the terahertz electric fiel
ds.