STRUCTURE-SENSITIVE SPECTROSCOPY OF TRANSITION-METAL-HYDROGEN COMPLEXES IN SILICON

Several centers that involve Pt and H have been introduced into n-type Si and studied by electron paramagnetic resonance and vibrational spe ctroscopy to provide unique structure-sensitive data for an H-passivat ed deep level impurity. Through the observation of Pt-H and -D hyperfi ne interactions, a new Pt-H-2 complex has been identified. This defect is still electrically active and its level has been located. Several vibrational bands due to Pt and H related centers were also found. H s tretching bands at 1888.2 and 1889.5 cm-1 are assigned to the differen t charge states of the Pt-H-2 defect.