JUNCTION PROPERTIES OF CLO4--DOPED POLY(METHYLQUINOLINE) WITH INDIUM

Authors
AN H ISHIZAWA R SATO K KOBAYASHI S YOSOMIYA R
Citation
H. An et al., JUNCTION PROPERTIES OF CLO4--DOPED POLY(METHYLQUINOLINE) WITH INDIUM, Synthetic metals, 58(3), 1993, pp. 335-341
Citations number
15
Categorie Soggetti
Physics, Condensed Matter","Metallurgy & Mining
Journal title
Synthetic metals → ACNP
ISSN journal
03796779
Volume
58
Issue
3
Year of publication
1993
Pages
335 - 341
Database
ISI
SICI code
0379-6779(1993)58:3<335:JPOCPW>2.0.ZU;2-A
Abstract
Junction properties of ClO4--doped poly(4-methylquinoline) with indium are investigated using a sandwich-type element. ClO4--doped poly(4-me thylquinoline) and indium form rectification contacts, whereas ohmic c ontacts are formed for junctions with gold or platinum. From analyses of current-voltage and capacitance-voltage characteristics, we suggest that a Schottky barrier is formed at the interface between poly(4-met hylquinoline) and indium.