Junction properties of ClO4--doped poly(4-methylquinoline) with indium
are investigated using a sandwich-type element. ClO4--doped poly(4-me
thylquinoline) and indium form rectification contacts, whereas ohmic c
ontacts are formed for junctions with gold or platinum. From analyses
of current-voltage and capacitance-voltage characteristics, we suggest
that a Schottky barrier is formed at the interface between poly(4-met
hylquinoline) and indium.