V. Hopfe et al., INFRARED REFLECTION STUDIES OF CERAMICS - CHARACTERIZATION OF SIC LAYERS ON GRAPHITE SUBSTRATES, Fresenius' journal of analytical chemistry, 346(1-3), 1993, pp. 99-103
Technical CVD-grown silicon carbide (beta-SiC) layers on graphite subs
trates have been studied by infrared spectroscopy. Specular reflectanc
e spectra were measured at oblique incidence, and for the same experim
ental conditions such spectra were simulated starting from oscillator
parameters which basically determine the optical behaviour of the mate
rial. Both the roughness of the surface and the roughness of the inter
face within the coated material, have considerable influence on the sp
ectra. Modelling these zones as gradient layers on the basis of effect
ive-medium approximations, convincing agreement between experiment and
simulation can be obtained. In this way the effective dielectric func
tion of the layer, as well as its thickness, are derived. Certain feat
ures within the reststrahlen band can be assigned to the excitation of
surface phonons which strongly depend on the morphology of the layer.