ARXPS-ANALYSIS OF SPUTTERED TIC, SIC AND TI0.5SI0.5C LAYERS

TiC, SiC and Ti0.5Si0.5C layers have been deposited by magnetron sputt ering in Argon at bias voltages between 0 and 1500 V. AES and ARXPS an alyses show that TiC and Ti0.5Si0.5C, at bias voltages below 1000 V, a re C-rich (+ 20%) and contain TiC crystallites of diameter below about 10 nm and have a metal-like resistance of about mOMEGA cm. The excess C segregates to the surface of TiC nanocrystallites showing an XPS C ls level shift similar to Li-graphite or doped fullerenes. The doped c arbon ('carbidic') interface layer, higher deposition rate and better mechanical strength seem to be interrelated. Magnetron sputtered SiC i s X-ray amorphous and insulating, grows more slowly, has reduced mecha nical strength and does not contain excess C. The ARXPS analysis of Ti 0.5Si0.5C layers allows the modelling of the TiC nanocrystallites embe dded in interfacial carbon and defective SiC.