PHOTOELECTRICAL PROPERTIES OF CUINSE2

Citation
M. Lal et al., PHOTOELECTRICAL PROPERTIES OF CUINSE2, Thin solid films, 227(2), 1993, pp. 177-180
Citations number
29
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
227
Issue
2
Year of publication
1993
Pages
177 - 180
Database
ISI
SICI code
0040-6090(1993)227:2<177:PPOC>2.0.ZU;2-E
Abstract
The steady-state and transient photoconductivity measurements on CuInS e2 films prepared by solution growth technique have been performed as a function of temperature and illumination intensities. Photo-conducti vity is found to increase exponentially with increasing temperature an d the photocurrent (I(ph)) obeys a power law: I(ph) is-proportional-to F(gamma). The transient photoconductivity data show that the rise/dec ay of photocurrent is fast in the beginning and slower thereafter. The overall photoelectric behaviour suggests a bimolecular recombination mechanism for CuInSe2.