GROWTH OF PBSE0.78TE0.22 LATTICE-MATCHED WITH BAF2

PbSe0.78Te0.22 epitaxial layers lattice-matched with (100) BaF2 substr ates have been grown for the first time. Layers were grown by liquid p hase epitaxy (LPE) from Pb1 - z(Se1 - yLTeyL)z liquid solutions. X-ray diffraction results show that lattice-matching occurs when y(L) is 60 %. Liquidus data for Pb1 - z(Se0.40Te0.60)z are also presented for z = 0.5-3.0 which corresponds to liquidus temperatures between 450 and 65 0-degrees-C. Epitaxial layers are consistently obtained when LPE growt h is initiated above 610-degrees-C. Layer thickness measurements confi rm that the PbSe0.78Te0.22 growth rate is controlled by selenium and t ellurium diffusion through the liquid solution. Measured Hall mobiliti es of 624 cm2 V-1 s-1 at room temperature and 7850 cm2 V-1 s-1 at 77 K demonstrate that these layers are suitable for device fabrication.