Absolute cross sections for electron-impact single ionization of Si+ a
nd Si2+ have been measured using crossed beams of ions and electrons a
nd calculated using a configuration-average distorted-wave method. Cor
rections have been made for metastable components and small fractions
of nitrogen impurities in the incident ion beams. Excitation-autoioniz
ation measurably enhances the cross sections of both Si+ and Si2+. Ion
ization rate coefficients and fitting parameters are presented for the
experimental data.