SUBVOLUME EMBEDDING FOR INTERFACIAL ELECTRONIC-STRUCTURE

Citation
S. Crampin et al., SUBVOLUME EMBEDDING FOR INTERFACIAL ELECTRONIC-STRUCTURE, Surface science, 287, 1993, pp. 732-735
Citations number
7
Categorie Soggetti
Chemistry Physical
Journal title
ISSN journal
00396028
Volume
287
Year of publication
1993
Part
B
Pages
732 - 735
Database
ISI
SICI code
0039-6028(1993)287:<732:SEFIE>2.0.ZU;2-1
Abstract
We discuss aspects of a new method for interfacial electronic structur e calculations which combines full potential accuracy and linear scali ng of cpu/memory requirements with the number of atomic planes. The ba sic method is to partition space into subvolumes, with a separate expa nsion of the one-electron Green function made within each subvolume. A djacent subvolumes are coupled via embedding potentials. We comment up on the advantages of the method, and illustrate with an application to the stepped jellium surface.