STACKING-FAULTS IN EPITAXY INVESTIGATED BY SPALEED

Authors
Citation
C. Ammer, STACKING-FAULTS IN EPITAXY INVESTIGATED BY SPALEED, Surface science, 287, 1993, pp. 964-968
Citations number
16
Categorie Soggetti
Chemistry Physical
Journal title
ISSN journal
00396028
Volume
287
Year of publication
1993
Part
B
Pages
964 - 968
Database
ISI
SICI code
0039-6028(1993)287:<964:SIEIBS>2.0.ZU;2-E
Abstract
Some experimental results on the epitaxy on fcc (111) surfaces indicat e that the lattice sites of the deposited layers can vary between the face-centered cubic and the hexagonal close-packed stacking sequence. Several non-specular beams in SPALEED (spot profile analysis of LEED) are suited to detect quantitatively the registry of islands or flat hi llocks at the surface. Because of the small penetration depth of the e lectrons the localization of stacking faults is mostly limited to the uppermost layer. Deeper-lying stacking faults are proved by a constant phase jump in the scattering factor reducing the peak intensity of th e spot.