REFLECTION ELECTRON-MICROSCOPY STUDIES OF GAP(110) SURFACES IN UHV-TEM

Citation
M. Gaidardziskajosifovska et al., REFLECTION ELECTRON-MICROSCOPY STUDIES OF GAP(110) SURFACES IN UHV-TEM, Surface science, 287, 1993, pp. 1062-1066
Citations number
10
Categorie Soggetti
Chemistry Physical
Journal title
ISSN journal
00396028
Volume
287
Year of publication
1993
Part
B
Pages
1062 - 1066
Database
ISI
SICI code
0039-6028(1993)287:<1062:RESOGS>2.0.ZU;2-I
Abstract
Reflection electron microscopy (REM) and reflection high energy electr on diffraction (RHEED) were used in a UHV electron microscope to study the effects of various surface treatments on the topography and cryst al structure of cleaved GaP(110) surfaces. Reported ion-milling and an nealing cleaning treatments resulted in rough surface topography, and in good 1 x 1 RHEED patterns. Annealing at 800-degrees-C resulted in s urface smoothing, but also led to dissociation of GaP with viscous flo w of a Ga-rich molten phase on the surface. Regions on the surface whi ch were not covered by the molten phase maintained the 1 x 1 reconstru ction typical of the clean GaP(110) surface.