Reflection electron microscopy (REM) and reflection high energy electr
on diffraction (RHEED) were used in a UHV electron microscope to study
the effects of various surface treatments on the topography and cryst
al structure of cleaved GaP(110) surfaces. Reported ion-milling and an
nealing cleaning treatments resulted in rough surface topography, and
in good 1 x 1 RHEED patterns. Annealing at 800-degrees-C resulted in s
urface smoothing, but also led to dissociation of GaP with viscous flo
w of a Ga-rich molten phase on the surface. Regions on the surface whi
ch were not covered by the molten phase maintained the 1 x 1 reconstru
ction typical of the clean GaP(110) surface.