ANOMALOUS FEATURES OF THALLIUM OXIDE ELECTRODEPOSITED LAYERS AND ROOM-TEMPERATURE HTSC ELECTROSYNTHESIS

Authors
PETRII OA TSIRLINA GA RAKOVA TV VASSILIEV SY
Citation
Oa. Petrii et al., ANOMALOUS FEATURES OF THALLIUM OXIDE ELECTRODEPOSITED LAYERS AND ROOM-TEMPERATURE HTSC ELECTROSYNTHESIS, Journal of Applied Electrochemistry, 23(6), 1993, pp. 583-588
Citations number
21
Categorie Soggetti
Electrochemistry
Journal title
Journal of Applied Electrochemistry → ACNP
ISSN journal
0021891X
Volume
23
Issue
6
Year of publication
1993
Pages
583 - 588
Database
ISI
SICI code
0021-891X(1993)23:6<583:AFOTOE>2.0.ZU;2-#
Abstract
The results of gravimetric, chemical and X-ray diffractometric analysi s of anodic deposits formed in alkaline TlNO3 and Tl2SO4 solutions are presented and discussed in connection with the kinetics of Tl+ electr ooxidation on copper and platinum anodes. In addition to Tl2O3 as the main product other phases were also discovered, for example TlCuO(OH). This new phase is of great interest as a HTSC precursor. The incorpor ation of Tl+ into the deposits on both substrates has been confirmed b y their excess weight amounting to 30%. Also the influence of the curr ent density on the excess weight has been revealed. The excess weight was a result of co-crystallization of Tl+ and Tl3+ in the form of a mi xed-valence oxide.