ELECTROREFLECTANCE STUDY OF THE E(1) AND E(0) OPTICAL-TRANSITIONS IN THIN GE SI SUPERLATTICES/

Authors
RODRIGUES PAM CERDEIRA F CARDONA M KASPER E KIBBEL H
Citation
Pam. Rodrigues et al., ELECTROREFLECTANCE STUDY OF THE E(1) AND E(0) OPTICAL-TRANSITIONS IN THIN GE SI SUPERLATTICES/, Solid state communications, 86(10), 1993, pp. 637-642
Citations number
17
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
86
Issue
10
Year of publication
1993
Pages
637 - 642
Database
ISI
SICI code
0038-1098(1993)86:10<637:ESOTEA>2.0.ZU;2-1
Abstract
We report low temperature (77 K) electroreflectance measurements on a series of Ge(n) Si(m) strain-symmetrized superlattices. The results ob tained for samples with n + m less-than-or-equal-to 10 are consistent with band structure calculations performed using the linear muffin-tin orbitals method as well as data from previous ellipsometric measureme nts. Results for superlattices with n + m greater-than-or-equal-to 20 can be explained by a straightforward extension of this conceptual sch eme.