ELECTRONIC STATES ON SI(100)2X1-SB - EXISTENCE OF 2 SEMICONDUCTING PHASES

Authors
CRICENTI A SELCI S FELICI AC FERRARI L CHIAROTTI G
Citation
A. Cricenti et al., ELECTRONIC STATES ON SI(100)2X1-SB - EXISTENCE OF 2 SEMICONDUCTING PHASES, Solid state communications, 86(10), 1993, pp. 667-670
Citations number
11
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
86
Issue
10
Year of publication
1993
Pages
667 - 670
Database
ISI
SICI code
0038-1098(1993)86:10<667:ESOS-E>2.0.ZU;2-Z
Abstract
Two different Sb-induced phases have been found upon annealing on fres hly evaporated Si(100)2 x 1 surfaces. The surface electronic structure s of the two phases (1 x 1-Sb and 2 x 1-Sb) have been studied with sur face differential reflectivity (SDR) and angle-resolved photoelectron spectroscopy (ARUPS). Both techniques show the existence of a gap of a pproximately 1.6 and 1.4 eV for the two phases, with the empty state l ocated near the Fermi level.