HIGH-RESOLUTION PHOTOELECTRON-SPECTROSCOPY STUDY OF (ROOT-3X-ROOT-3) R30-DEGREES-AG ON SI(111)

High-resolution surface and bulk sensitive photoemission were used to study the Si2p core level from the (square-root 3 x square-root 3)R30- degrees-Ag/Si(111) surface. Four components of the Si2p levels are obs erved for this system. Their relative positions are found to be indepe ndent with respect to sample preparation, suggesting no net change in the local atomic order of the square-root 3 domains. However, their re lative intensities, measured for surfaces prepared at deposition tempe ratures of 350 and 530-degrees-C, show significant differences which a re assigned to changes in the relative square-root 3 domain sizes.