HIGH-CURRENT DENSITY IN AMORPHOUS-SILICON SILICONCARBIDE DOUBLE-BARRIER RESONANT-TUNNELING DEVICE ON ALUMINUM-SILICON SUBSTRATE

The resonant tunneling phenomena through the amorphous silicon/silicon carbide (a-Si:H/a-SiC:H) double-barrier structure have been studied. T he double-barrier structures were prepared on three different substrat es: crystalline silicon, ITO/glass, and Al/Si. The effects of electron concentration in the injection/collection regions and of operating te mperature on the resonant tunneling current density were investigated. High current densities of 3 x 10(5) A/m2 and 2.1 X 10(6) A/m2 were ob tained at room temperature and at 77 K, respectively, on Al/Si substra tes.