A SEMIANALYTICAL APPROACH TO COMPUTE THE DECAY OF OPTICALLY GENERATEDCARRIERS IN SILICON-WAFER

A diffusion model is applied to the recombination dynamics of photogen erated carriers created by laser beam incident to a silicon slab. This analysis yields excess carrier density as an analytical function of t ime and depth, allowing a fast modeling of excess carrier decay with m ulti-parameter tuning capability such as excess carrier diffusion coef ficient, wafer thickness, surface recombination velocity, bulk lifetim e, excitation light absorption coefficient and pulse duration of the e xcitation laser beam.