A STUDY OF THE CHEMICAL-COMPOSITION OF SOME COBALT SILICIDE LAYER STRUCTURES

Authors
GREENWOOD JC LAMB B PRUTTON M
Citation
Jc. Greenwood et al., A STUDY OF THE CHEMICAL-COMPOSITION OF SOME COBALT SILICIDE LAYER STRUCTURES, Surface and interface analysis, 20(6), 1993, pp. 524-530
Citations number
22
Categorie Soggetti
Chemistry Physical
Journal title
Surface and interface analysis → ACNP
ISSN journal
01422421
Volume
20
Issue
6
Year of publication
1993
Pages
524 - 530
Database
ISI
SICI code
0142-2421(1993)20:6<524:ASOTCO>2.0.ZU;2-6
Abstract
Auger and loss spectra and images have been obtained from a CoSi2 stan dard and a structure containing cobalt-silicon films between a Co surf ace layer and a silicon substrate. The results from a Phi 590 spectrom eter and the York MULSAM instrument have been compared. Quantitative a nalysis of the compositions of both samples has shown that elements ca n be used as standards along with well-established matrix correction p rocedures. However, the effects of preferential sputtering in conventi onal depth profiling or bevel sectioning with ions lead to a complex c omposition distribution that is depleted in Si at the surface. The pla smon loss below the Co LVV Auger peak is enhanced in height near to th e Si/silicide interface. The layer structure appears to be close to Co /Co2Si/CoSi/Si.