INFLUENCE OF RESISTS ON REACTIVE ION ETCHING

In the course of plasma etchng we can observe a loading effect, i.e. t he etch rate depends on the size of the etched surface exposed to the plasma. This phenomenon was explained according to Mogab by the plasma active etch species depletion via a rapid etch reaction. But there ex ist more complicated systems, for example SiO2-photoresist SCR17-CHF3, where the SiO2 surface can be etched and a polymer layer can grow on the photoresist surface. The etching of SiO2 is also influenced by dif ferent resists in the case of differences in their chemical structure. The degree of electrode coating with a resist influences both the etc h rate of the masking layer. This may be used for the control of the e tching selectivity in the SiO2-resist system independently of other pr ocess parameters.