Nonlinear optical films of LiTaO3 were epitaxially grown on (NH4)2Sx-t
reated (111) GaAs using e-beam evaporated MgO as intermediate layers.
The MgO lattice was found to rotate by 180-degrees about the [111] sur
face normal with respect to the GaAs substrate. The laser-ablated LiTa
O3 film grew epitaxially in the preferred [0001] direction and formed
a waveguide with its underlying buffer layer of MgO.