MICROCAVITY ENHANCED VERTICAL-CAVITY LIGHT-EMITTING-DIODES

Citation
U. Keller et al., MICROCAVITY ENHANCED VERTICAL-CAVITY LIGHT-EMITTING-DIODES, Applied physics letters, 62(24), 1993, pp. 3085-3087
Citations number
19
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
62
Issue
24
Year of publication
1993
Pages
3085 - 3087
Database
ISI
SICI code
0003-6951(1993)62:24<3085:MEVL>2.0.ZU;2-V
Abstract
We systematically studied microcavity enhancement an mode-coupling eff ects in photo- an electroluminescence of an AlGaAs/GaAs vertical-cavit y light-emitting diode (LED) by continuously changing the microcavity resonance with respect to the quantum well band gap. At mode overlap w e obtained maximum photo- and electroluminescence intensities and a mi nimum emitted linewidth of 4.6 nm at 836 nm with a FWHM divergence of 62-degrees. However, the electrical-to-optical efficiency was less tha n 1 muW/mA. Application issues for optical interconnects are presented .