We systematically studied microcavity enhancement an mode-coupling eff
ects in photo- an electroluminescence of an AlGaAs/GaAs vertical-cavit
y light-emitting diode (LED) by continuously changing the microcavity
resonance with respect to the quantum well band gap. At mode overlap w
e obtained maximum photo- and electroluminescence intensities and a mi
nimum emitted linewidth of 4.6 nm at 836 nm with a FWHM divergence of
62-degrees. However, the electrical-to-optical efficiency was less tha
n 1 muW/mA. Application issues for optical interconnects are presented
.