EFFECT OF CARRIER ESCAPE TIME ON THE PERFORMANCE OF SEMIINSULATING PHOTOREFRACTIVE SELF-ELECTRO-OPTIC EFFECT DEVICES

Authors
PARTOVI A GLASS AM ZYDZIK GJ OBRYAN HM CHIU TH KNOX WH
Citation
A. Partovi et al., EFFECT OF CARRIER ESCAPE TIME ON THE PERFORMANCE OF SEMIINSULATING PHOTOREFRACTIVE SELF-ELECTRO-OPTIC EFFECT DEVICES, Applied physics letters, 62(24), 1993, pp. 3088-3090
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
62
Issue
24
Year of publication
1993
Pages
3088 - 3090
Database
ISI
SICI code
0003-6951(1993)62:24<3088:EOCETO>2.0.ZU;2-J
Abstract
We report on the effect of carrier escape time on the performance of s emi-insulating photorefractive self-electro-optic effect devices by in vestigating three samples of Cr-doped GaAs/AlxGa1-xAs multiple quantum wells of varying barrier thickness and height. Reduction of barrier t hickness from 100 to 35 angstrom and Al fraction from 0.42 to 0.29 res ults in a three orders of magnitude increase in diffraction efficiency at a given voltage. The effect of shorter carrier escape and sweep-ou t times on the diffraction efficiency, resolution, and sensitivity of these devices is discussed.