CHEMICAL-VAPOR-DEPOSITION OF SILICON-CARBIDE THIN-FILMS ON TITANIUM CARBIDE, USING 1,3 DISILACYCLOBUTANE

Silicon carbide (SiC) thin films were deposited on titanium carbide (T iC) substrates by pyrolysis of 1,3 disilacyclobutane (C2H8Si2), at atm ospheric pressure, in an inverted-vertical cold-wall chemical vapor de position reactor. The growth rate, morphology, and crystallinity of th e films were studied, at constant C2H8Si2 flow rate, as a function of substrate temperature (810-degrees-C less-than-or-equal-to T(s) less-t han-or-equal-to 1285-degrees-C). The growth rate increased with increa sing T(s). Film morphologies were dependent on T(s) and slight differe nces in TiC substrate orientation at T(s) greater-than-or-equal-to 101 5-degrees-C. A smooth, soft as-grown morphology was obtained at 810-de grees-C. Hard, rough as-grown surfaces were obtained at T(s) greater-t han-or-equal-to 1066-degrees-C. Films grown at T(s) greater-than-or-eq ual-to 1066-degrees-C contained a SiC primary phase and a Si-rich seco nd phase. Epitaxial growth of beta-SiC was obtained only at 1210-degre es-C.