MULTILEVEL RAMP TRANSITIONS IN GAAS CIRCUITS

Two techniques for the integration of GaAs devices in multiple layer t opologies are presented. An isotropic reactive ion etching technique i s discussed for free-standing-metal interconnections within the same l ayer. A complementary approach for connections between different level s, based on chemically assisted ion beam etched ramps, is also describ ed. In addition, both techniques can be used for device isolation.