ROUGHNESS OF THE SILICON (001) SIO2 INTERFACE

Authors
TANG MT EVANSLUTTERODT KW HIGASHI GS BOONE T
Citation
Mt. Tang et al., ROUGHNESS OF THE SILICON (001) SIO2 INTERFACE, Applied physics letters, 62(24), 1993, pp. 3144-3146
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
62
Issue
24
Year of publication
1993
Pages
3144 - 3146
Database
ISI
SICI code
0003-6951(1993)62:24<3144:ROTS(S>2.0.ZU;2-H
Abstract
We use synchrotron x-ray diffraction to characterize the roughness of the buried Si(001)/SiO2 interface, for three types of oxide, without m odification of the.interface. We show that the thermal oxide interface is 0.5 +/- 0.1 times as rough as the native oxide interface, suggesti ng that the oxide growth decreases the roughness slightly. We also mea sure the roughness of a chemically grown oxide interface.