REDUCTION OF INTERFACE-TRAP DENSITY IN METAL-OXIDE-SEMICONDUCTOR DEVICES BY IRRADIATION

Authors
BALASINSKI A MA TP
Citation
A. Balasinski et Tp. Ma, REDUCTION OF INTERFACE-TRAP DENSITY IN METAL-OXIDE-SEMICONDUCTOR DEVICES BY IRRADIATION, Applied physics letters, 62(24), 1993, pp. 3170-3171
Citations number
5
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
62
Issue
24
Year of publication
1993
Pages
3170 - 3171
Database
ISI
SICI code
0003-6951(1993)62:24<3170:ROIDIM>2.0.ZU;2-U
Abstract
Annealing o inter ace defects in metal-oxide-semiconductor (MOS) devic es by x-ray irradiation has been observed. The effect occurs in rad-ha rd devices which had been previously damaged severely by high-field Fo wler-Nordheim electron injection, but has not been observed in standar d MOS devices which are not radiation-hardened. A mechanism based on t he recombination-enhanced-defect-reactions process is proposed to expl ain the results.