EFFECTS OF ION-BEAM DEFECT ENGINEERING ON CARRIER CONCENTRATION PROFILES IN 50-KEV P-IMPLANTED SI(100)()

Shallower carrier concentration profiles in 50 keV P+-implanted Si(100 ) after annealing at 1000-degrees-C for 1 h have been observed when a buried amorphous layer was formed by an additional irradiation of 1.0 MeV Si+ ions prior to annealing (i.e., ion beam defect engineering pro cess). The secondary defects formed in the MeV Si+ damaged region act as gettering sites for the collection of interstitials from the shallo wer depths which are responsible for the transient diffusion of P, and therefore the transient diffusion of P is reduced and the carrier con centration profiles become shallower.