TI-ADDED AL ELECTRODES ON LITAO3 36-DEGREES Y-X SUBSTRATES FOR HIGH-POWER SURFACE-ACOUSTIC-WAVE DEVICES .1.

The influences of the internal stress of the film, annealing treatment and a sputtered Ti-added Al electrode on 36-degrees rotated Y-XLiTaO3 substrates were investigated. Higher activation energy of the time to failure (TF) was obtained when the amount of internal stress was decr eased. The annealing temperature is limited to below 400-degrees-C bec ause of discoloration and phase change of the substrate. TF with Al-0. 6 wt% Ti electrodes in IIDT filters became ten times that obtained wit h Al-0.2 wt% Ti electrodes. By the increase of the amount of Ti, the g rain size and the standard deviation were decreased.