MISFIT ACCOMMODATION AND DISLOCATIONS IN HETEROEPITAXIAL SEMICONDUCTOR LAYERS - II-VI COMPOUNDS ON GAAS

Authors
PATRIARCHE G RIVIERE JP CASTAING J
Citation
G. Patriarche et al., MISFIT ACCOMMODATION AND DISLOCATIONS IN HETEROEPITAXIAL SEMICONDUCTOR LAYERS - II-VI COMPOUNDS ON GAAS, Journal de physique. III, 3(6), 1993, pp. 1189-1199
Citations number
15
Categorie Soggetti
Material Science","Phsycs, Fluid & Plasmas","Physics, Applied
Journal title
Journal de physique. III → ACNP
ISSN journal
11554320
Volume
3
Issue
6
Year of publication
1993
Pages
1189 - 1199
Database
ISI
SICI code
1155-4320(1993)3:6<1189:MAADIH>2.0.ZU;2-W
Abstract
We suggest a model for the nucleation and expansion of dislocations wh ich accommodate the parameter misfit of an epitaxial layer on a substr ate, applied, in this work, to a II-VI compound on GaAs. We examine in particular the dislocations threading through the layer, which must b e kept as low as possible in density.