G. Patriarche et al., MISFIT ACCOMMODATION AND DISLOCATIONS IN HETEROEPITAXIAL SEMICONDUCTOR LAYERS - II-VI COMPOUNDS ON GAAS, Journal de physique. III, 3(6), 1993, pp. 1189-1199
Citations number
15
Categorie Soggetti
Material Science","Phsycs, Fluid & Plasmas","Physics, Applied
We suggest a model for the nucleation and expansion of dislocations wh
ich accommodate the parameter misfit of an epitaxial layer on a substr
ate, applied, in this work, to a II-VI compound on GaAs. We examine in
particular the dislocations threading through the layer, which must b
e kept as low as possible in density.