ELECTROCHEMICAL ETCHING OF SILICON BY HYDRAZINE

The anodic dissolution and passivation of n- and p-type Si in differen t concentrations etching temperatures were studies. During etching, pe rformed at 70 and 90-degrees-C, it was observed that the current-poten tial characteristics for both n- and p-type Si showed a current reduct ion after reaching a peak value. A linear I-V relation was observed fo r the room temperature etching. A mechanism, which accounts for the so lution as under different biasing conditions, is proposed to give a qu alitative explanation of the different I-V behaviors for n- and p-type semiconductors.