EPITAXIAL-GROWTH OF BETA-SIC ON TICX BY REACTIVE EVAPORATION

A parametric growth study was performed to determine optimum condition s for epitaxial growth of beta-SiC on TiC(x) by reactive evaporation. The growth sources were E-beam evaporated Si and acetylene. The polycr ystalline to epitaxial growth transition temperature was determined to be about 1250-degrees-C, and the optimum epitaxial growth temperature was about 1400-degrees-C. All beta-SiC epilayers exhibited an n-type carrier concentration of about 2 X 10(18), independent of growth condi tions, due to the high concentration of nitrogen in the acetylene. The Ti concentration ([Ti]) at the beta-SiC/TiC(x) epitaxial interface wa s graded, due to Ti diffusion during epitaxial growth. The as-grown [T i] profile at the beta-SiC/TiC(x) interface was stable at 500-degrees- C. However, the [Ti] profile, ion implanted into a beta-SiC epilayer, changed appreciably at 500-degrees-C.