THE EFFECTS OF DOSE AND TARGET TEMPERATURE ON LOW-ENERGY SIMOX LAYERS

The critical doses required to form a continuous buried stoichiometric oxide layer for 70 keV oxygen implantation either during implantation , PHI(c)I, or after implantation and annealing, PHI(c)A, are almost-eq ual-to 7 X 10(17) O+/cm2 and almost-equal-to 3 X 10(17) O+/cm2, respec tively. The dislocation density in the silicon overlayer and the distr ibution and density of silicon islands in the buried SiO2 layer of the annealed (70 KeV) SIMOX (separated by implantation of oxygen) samples are strongly dependent on the oxygen dose (PHI) and the target temper ature (T(i)). Good quality thin-film SIMOX layers with a low threading dislocation density in the silicon overlayer and low density of silic on islands in the buried SiO2 layer have been produced by implantation of 3.3 X 10(17) O+/cm2 at 680-degrees-C.