INSITU OBSERVATION OF THE GROWTH-PROCESS OF THE INAS-GAAS HETEROEPITAXIAL SYSTEM USING SCANNING MICROPROBE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION TOTAL-REFLECTION ANGLE X-RAY SPECTROSCOPY

A scanning reflection electron microscopy-total reflection angle X-ray spectroscopy (SREM-TRAXS) system has been newly developed for in situ monitoring of the crystal structure and the chemical composition of f ilm surfaces during molecular beam epitaxy. In this system, the primar y electron beam from the microprobe reflection high energy electron di ffraction gun is focused on the sample down to below 1 mum in diameter . The SREM image and TRAXS image are simultaneously obtained by monito ring the diffraction spot intensity on the fluorescent screen and by d etecting the X-rays emitted from the sample at the critical angle for total reflection respectively. The surfaces of InAs films on GaAs subs trates grown under various conditions were observed in situ with this system. The take-off angle dependence of the characteristic X-ray inte nsity was closely related to the surface morphology of the grown film observed with this system.