STRAINED SIGE-ALLOY LAYERS FORMED BY SOLID-PHASE EPITAXIAL-GROWTH OF GE-IMPLANTED SILICON( ION)

Strained SiGe-alloy layers in Si(001) crystals with a maximum Ge conce ntration of 14 at.% were formed by ion implantation and solid phase ep itaxial growth, The ion implantation was carried out with 40 keV Ge-74 (+) ions and a dose of 2.2 x 10(16) ions/cm(2). The samples were annea led at 850 degrees C for 20 min in a conventional furnace in a flow of nitrogen gas. Rutherford backscattering spectrometry and transmission electron microscopy show that the alloy layers are of good crystal qu ality with no extended defects, The measurements also show that the al loy layer is tetragonally distorted, i.e. the alloy layer is strained.