EMISSION-LINE INTENSITIES IN AN RF-SPUTTERING GLOW-DISCHARGE SYSTEM

An in situ analysis of an r.f. discharge is carried out. The relations hip between the discharge parameters, composition and growth rate of t he deposited thin films and the glow discharge optical spectroscopy si gnal is presented. Three semiconducting single-phase chalcopyrite targ ets of Cu(Ga, In)Se2 were sputtered in an Ar atmosphere. The compositi on of the discharge was measured and it correlated with the compositio n of the deposited thin films. To be able to extend the determination of the film properties to different discharge conditions we have studi ed the variation in the optical emission with the Ar pressure and the r.f. power. The behaviour of the optical emission intensities as a fun ction of both the Ar pressure and discharge power is explained in term s of the variation in the electron energy distribution function.