H IN TI THIN-FILMS

Ni-Ti single and multilayers were prepared in a triode sputtering mach ine. The thicknesses of the Ti layers were varied between 5 and 100 nm and the H-2 partial pressure between 5 x 10(-7) and 5 x 10(-5) mbar. The samples were characterized by various nuclear methods. It was foun d that for H-2 partial pressures below 5 x 10(-5) mbar the ratio of H: Ti atoms was 40 +/- 12 at.% for Ti thicknesses above 10 nm. For smalle r thicknesses this ratio decreases to 20 at.%. H-2 partial pressures a bove 7 x 10(-4) mbar allow an H:Ti ratio of 1 to be reached for Ti lay ers thicker than 40 nm.