PREPARATION AND MICROSTRUCTURE OF REACTIVELY SPUTTERED TI1-XZRXN FILMS

Citation
I. Sakamoto et al., PREPARATION AND MICROSTRUCTURE OF REACTIVELY SPUTTERED TI1-XZRXN FILMS, Thin solid films, 228(1-2), 1993, pp. 169-172
Citations number
9
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
228
Issue
1-2
Year of publication
1993
Pages
169 - 172
Database
ISI
SICI code
0040-6090(1993)228:1-2<169:PAMORS>2.0.ZU;2-R
Abstract
Thin films of Ti1-xZrxN with various x have been deposited by reactive ly sputtering with a segmental Ti-Zr target in an Ar-N2 mixture under different conditions of total pressure and applied substrate bias. The thin films are characterized from the macro and micro points of view with the use of Auger electron spectroscopy, X-ray diffraction, electr on probe microanalysis and high resolution field emission scanning ele ctron microscopy. It has been found that the microstructure of the fil ms depends strongly on the deposition conditions such as substrate pos ition, total pressure and applied substrate bias, whereas it is less s ensitive to the composition X. Ti1-xZrxN films are suggested to act as a good diffusion barrier.