ION-BEAM MODIFICATION OF THE PHYSICAL-PROPERTIES OF MOSX FILMS

Thin solid films of MoS(x) have been deposited by both r.f. magnetron and d.c. sputtering. The composition of these films is dependent on th e deposition conditions and is explained in terms of studies of the an gular distribution of the sulphur and molybdenum components during spu ttering. Post-deposition ion bombardment of these films with 80 keV io ns (Xe, Ar or Ne) as well as concurrent ion bombardment during deposit ion with 100-200 eV Ar+ results in sulphur-deficient films which are a lso compacted. The composition of the films is dependent on the ion sp ecies and fluence whilst the rate of compaction is found to scale with the nuclear component of the deposited energy.