STRUCTURE AND PROPERTIES OF DEEPLY N-DOPED POLYACENIC SEMICONDUCTOR (PAS)

Authors
YATA S KINOSHITA H KOMORI M ANDO N KASHIWAMURA T HARADA T TANAKA K YAMABE T
Citation
S. Yata et al., STRUCTURE AND PROPERTIES OF DEEPLY N-DOPED POLYACENIC SEMICONDUCTOR (PAS), Synthetic metals, 55(1), 1993, pp. 388-393
Citations number
11
Categorie Soggetti
Physics, Condensed Matter","Metallurgy & Mining
Journal title
Synthetic metals → ACNP
ISSN journal
03796779
Volume
55
Issue
1
Year of publication
1993
Pages
388 - 393
Database
ISI
SICI code
0379-6779(1993)55:1<388:SAPODN>2.0.ZU;2-Z
Abstract
Polyacenic semiconductor (PAS) films (H/C=0.30) prepared from pyrolyti c treatment of phenol-formaldehyde resin can be deeply doped with lith ium up to 16.5% starting from IV versus Li/Li+ with good reversibility . From the 1st to the 100th doping-undoping cycle the X ray diffractio n pattern almost did not change. It has been found that PAS has excell ent stability even at the deeply doped state. Moreover, the XPS spectr a show that the doped lithium in PAS is in neither metallic nor ionic state.