MAPPING OF RESIDUES FORMING THE VOLTAGE SENSOR OF THE VOLTAGE-DEPENDENT ANION-SELECTIVE CHANNEL

Citation
L. Thomas et al., MAPPING OF RESIDUES FORMING THE VOLTAGE SENSOR OF THE VOLTAGE-DEPENDENT ANION-SELECTIVE CHANNEL, Proceedings of the National Academy of Sciences of the United Statesof America, 90(12), 1993, pp. 5446-5449
Citations number
25
Categorie Soggetti
Multidisciplinary Sciences
ISSN journal
00278424
Volume
90
Issue
12
Year of publication
1993
Pages
5446 - 5449
Database
ISI
SICI code
0027-8424(1993)90:12<5446:MORFTV>2.0.ZU;2-4
Abstract
Voltage-gated ion-channel proteins contain ''voltage-sensing'' domains that drive the conformational transitions between open and closed sta tes in response to changes in transmembrane voltage. We have used site -directed mutagenesis to identify residues affecting the voltage sensi tivity of a mitochondrial channel, the voltage-dependent anion-selecti ve channel (VDAC). Although charge changes at many sites had no effect , at other sites substitutions that increased positive charge also inc reased the steepness of voltage dependance and substitutions that decr eased positive charge decreased voltage dependance by an appropriate a mount. In contrast to the plasma membrane K+ and Na+ channels, these r esidues are distributed over large parts of the VDAC protein. These re sults have been used to define the conformational transitions that acc ompany voltage gating of an ion channel. This gating mechanism require s the movement of large portions of the VDAC protein through the membr ane.