C. Boschetti et al., GROWTH OF NARROW-GAP EPILAYERS AND P-N-JUNCTIONS ON SILICON FOR INFRARED DETECTORS ARRAYS, Infrared physics, 34(3), 1993, pp. 281-287
Lead telluride epilayers and p-n junctions were grown on silicon subst
rates by hot wall epitaxy in order to construct monolithic infrared (I
R) detectors arrays, using II-a fluorides as buffer layers Schottky ba
rriers were also made in the same epilayers to compare the figures of
merit. The p-n junctions had performances comparable with the metal ba
rriers and both devices had noise sources in addition to the expected
thermal and background ones.