GROWTH OF NARROW-GAP EPILAYERS AND P-N-JUNCTIONS ON SILICON FOR INFRARED DETECTORS ARRAYS

Authors
BOSCHETTI C RAPPL PHO UETA AY BANDEIRA IN
Citation
C. Boschetti et al., GROWTH OF NARROW-GAP EPILAYERS AND P-N-JUNCTIONS ON SILICON FOR INFRARED DETECTORS ARRAYS, Infrared physics, 34(3), 1993, pp. 281-287
Citations number
12
Categorie Soggetti
Optics,"Physics, Applied
Journal title
Infrared physics → ACNP
ISSN journal
00200891
Volume
34
Issue
3
Year of publication
1993
Pages
281 - 287
Database
ISI
SICI code
0020-0891(1993)34:3<281:GONEAP>2.0.ZU;2-X
Abstract
Lead telluride epilayers and p-n junctions were grown on silicon subst rates by hot wall epitaxy in order to construct monolithic infrared (I R) detectors arrays, using II-a fluorides as buffer layers Schottky ba rriers were also made in the same epilayers to compare the figures of merit. The p-n junctions had performances comparable with the metal ba rriers and both devices had noise sources in addition to the expected thermal and background ones.