A COMPARISON BETWEEN ELECTRON MOBILITIES IN HG1-XMNXTE AND HG1-XCDXTE

Electron mobility in the n-type diluted magnetic semiconductor Hg1-xMn xTe has been calculated in the absence of a magnetic field. The result s were compared to those of Hg1-xCdxTe for the same range of energy ga p. The calculations are based on solving the Boltzmann equation using a variational principle technique. The scattering processes that are i ncluded in the calculations are the scattering of the electrons with i onized impurities, holes, alloy disorder, acoustic phonons and longitu dinal optical phonons. At room temperatures the mobilities are nearly the same, while at temperatures of the order of liquid nitrogen they a re about 30% less for MMT as compared with the same concentration of d efects.