LARGE-SIGNAL CHARACTERIZATION OF DUAL-GATE FIELD-EFFECT TRANSISTORS USING LOAD-PULL MEASUREMENTS

Authors
DRURY DM ZIMMERMANN DC DAVIS WA
Citation
Dm. Drury et al., LARGE-SIGNAL CHARACTERIZATION OF DUAL-GATE FIELD-EFFECT TRANSISTORS USING LOAD-PULL MEASUREMENTS, IEEE transactions on microwave theory and techniques, 41(2), 1993, pp. 183-189
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE transactions on microwave theory and techniques → ACNP
ISSN journal
00189480
Volume
41
Issue
2
Year of publication
1993
Pages
183 - 189
Database
ISI
SICI code
0018-9480(1993)41:2<183:LCODFT>2.0.ZU;2-7
Abstract
A new automated injected signal load-pull measurement system has been designed to operate from 8 to 12 GHz, with a range of injected signal power extending to 4 W. The system has been shown to be as accurate as the HP8510 network analyzer. The large signal intrinsic drain to sour ce resistance of an 1800 mum dual gate FET was measured on the load-pu ll system, and subsequently a variable power amplifier was designed us ing the load-pull data. The amplifier output phase variation of the va riable power amplifier was 10-degrees when operating at 31.3 dBm.