MONOLITHIC INTEGRATED WAVELENGTH DUPLEXER-RECEIVER ON INP

The monolithic integration of a detector stage comprising a photodiode and a field-effect transistor with a load resistor and a wavelength d uplexer realized in the GaInAsP/InP material system is presented. Desi gn considerations, in particular with respect to the wavelength duplex er, but for the complete chip as well, are reported, and details relat ed to the realization of the device are given. Chips were mounted into housings and operated in a 1.3 mum/1.55 mum bidirectional transmissio n link At 576 Mb/s and 10(-9) bit error rate, the sensitivity of the m odule is -21 dBm, while the intrinsic sensitivity of the receiver is d etermined to be -28 dBm and the gain-bandwidth product for the lowest noise bias conditions amounts to 3.8 GHz.