HETEROJUNCTION IMPATT DIODES - USING NEW MATERIAL TECHNOLOGY IN A CLASSIC DEVICE

Authors
BAILEY MJ
Citation
Mj. Bailey, HETEROJUNCTION IMPATT DIODES - USING NEW MATERIAL TECHNOLOGY IN A CLASSIC DEVICE, Microwave journal, 36(6), 1993, pp. 76
Citations number
17
Categorie Soggetti
Engineering, Eletrical & Electronic",Telecommunications
Journal title
Microwave journal
ISSN journal
01926225 → ACNP
Volume
36
Issue
6
Year of publication
1993
Database
ISI
SICI code
0192-6225(1993)36:6<76:HID-UN>2.0.ZU;2-C
Abstract
Heterojunction IMPATT diodes incorporate the classic IMPATT diode tech nology of the 1960s with the emerging present-day material technologie s by replacing the diode's P/N junction with a GaAs/Al0.3Ga0.7As p/N h eterojunction. The resulting devices have shown up to 2 dB higher RF p ower, superior DC characteristics and 3 to 6 dB lower phase noise cont ent. These new devices are examined, and a first-order theory of opera tion is presented.