It is well-established that oxygen precipitation in silicon occurs rea
dily and is further facilitated by the presence of carbon. In contrast
, carbon precipitation in silicon appears to be a difficult process wh
ich takes place only in the presence of a sufficiently high supersatur
ation of oxygen or silicon self-interstitials. It is suggested that a
high interface energy of carbon precipitates in conjunction with the v
olume decrease associated with carbon precipitation or agglomeration a
llows one to understand the precipitation behavior of carbon in silico
n.