CARBON PRECIPITATION IN SILICON - WHY IS IT SO DIFFICULT

Citation
Wj. Taylor et al., CARBON PRECIPITATION IN SILICON - WHY IS IT SO DIFFICULT, Applied physics letters, 62(25), 1993, pp. 3336-3338
Citations number
24
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
62
Issue
25
Year of publication
1993
Pages
3336 - 3338
Database
ISI
SICI code
0003-6951(1993)62:25<3336:CPIS-W>2.0.ZU;2-O
Abstract
It is well-established that oxygen precipitation in silicon occurs rea dily and is further facilitated by the presence of carbon. In contrast , carbon precipitation in silicon appears to be a difficult process wh ich takes place only in the presence of a sufficiently high supersatur ation of oxygen or silicon self-interstitials. It is suggested that a high interface energy of carbon precipitates in conjunction with the v olume decrease associated with carbon precipitation or agglomeration a llows one to understand the precipitation behavior of carbon in silico n.