G. Flatgen et al., SYMBOLIC-DYNAMICAL ANALYSIS OF A TRANSITION BETWEEN DIFFERENT LIMIT-CYCLES OBSERVED IN A SEMICONDUCTOR EXPERIMENT, Physics letters. A, 177(2), 1993, pp. 148-152
Low-temperature semiconductor impact ionization breakdown typically ex
hibits spontaneous current oscillations depending sensitively upon ext
ernal control parameters. Discrete characteristics of the time series
are transformed into a symbolic sequence. We determine the information
entropies together with the order of the Markov process underlying th
e dynamics. These quantities allow one to characterize various transit
ions between different attractors in a quantitative way.